AON6206 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 24a r ds(on) (at v gs =10v) < 6.5m ? r ds(on) (at v gs = 4.5v) < 9m ? 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 3 65 4 power dissipation b p d w power dissipation a p dsm w t a =70c 31 2.7 t a =25c a t a =25c i dsm a t a =70c i d 24 19 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 16 continuous drain current 45 20 a 30 the AON6206 uses trench mosfet technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized due to an extremely low combination of r ds(on) and c rss .in addition,switching behavior is well controlled with a "schottky style" soft recovery body diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v v 20 gate-source voltage drain-source voltage 30 units maximum junction-to-ambient a c/w r ja 25 55 30 junction and storage temperature range -55 to 150 c thermal characteristics 150 pulsed drain current c continuous drain current g parameter typ max t c =25c 4.2 12 t c =100c g d s top view 1 2 3 4 8 7 6 5 pin1 dfn5x6 top view bottom view rev 0: nov. 2009 www.aosmd.com page 1 of 6
AON6206 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v i d(on) 150 a 5.2 6.5 t j =125c 7.7 9.5 79 m ? ? q g (10v) 15.5 19.6 23.5 nc q g (4.5v) 7 8.7 10.5 nc q gs 2.8 3.6 4.5 nc q gd 1.8 3 4.2 nc t d(on) 7.5 ns t r 9.7 ns t d(off) 20 ns t f 4.5 ns t rr 12 15 18 ns q rr 30 37 45 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =1a,v gs =0v v ds =5v, i d =20a v gs =4.5v, i d =15a v gs =10v, v ds =15v, r l =0.75 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =20a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 0 : nov. 2009 www.aosmd.com page 2 of 6
AON6206 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 10 20 30 40 50 60 1 1.5 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 2 4 6 8 10 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =15a v gs =10v i d =20a 0 5 10 15 20 25 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c 0 20 40 60 80 100 120 140 160 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =3v 3.5v 5v 6v 10v 4v rev 0: nov. 2009 www.aosmd.com page 3 of 6
AON6206 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c r ss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 jc =4c/w rev 0: nov 2009 www.aosmd.com page 4 of 6
AON6206 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 10 20 30 40 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =65c/w 10.0 100.0 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 0: nov. 2009 www.aosmd.com page 5 of 6
AON6206 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: nov. 2009 www.aosmd.com page 6 of 6
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